Radiation Tolerance of Single-Sided Microstrip Detector with $Si_{3}N_{4}$ Insulator

摘要

The ALICE Collaboration is investigating the radiation tolerance and operation of silicon microstrip detectors for the inner tracking system. Detectors with and without an additional layer of SiN insulator were made in one set, using the same thickness of SiO insulator. Measurements were made on both types of detectors after irradiation with 20 MeV electrons, using doses up to 2Mrad. The additional SiN layer allows a coupling capacitor breakdown voltage larger than 100 V and capacitor yield larger than 99 percent. However, the leakage current for detectors with double layer insulator is about 20 nA per strip while the leakage current for the single layer SiO insulated detectors is only 0.5 nA. The 20 nA leakage current leads to 450 electrons noise when the ALICE 128C electronics with a peaking time of 1.4 microseconds is used. At a 1 nA leakage current the noise is 100 electrons. The ENC for an input capacitance of 5 pF is 300 electrons. Since all detectors show an increased leakage current after irradiation, the difference between the single and duoble layer insulation detectors becomes negligible when doses of the order of several hundreds of krad are applied.